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Silicon is the material of choice for an extensive range of electronic and photonic devices. It is now being extensively used as substrate material for III-V semiconductor lasers in the telecom range, either through direct growth or through heterogeneous integration (wafer bonding). The motivation for this is a combination of costs and integration with silicon based photonic circuits. Researchers from the Chinese Academy of Sciences and University of California – Santa Barbara (USA) have now shown how other spectral ranges can also be integrated directly with Si substrates or Si-based photonic circuits respectively.